|
|
|
|
|
|
|
|
1. |
Record Nr. |
UNISA996217258703316 |
|
|
Titolo |
2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications |
|
|
|
|
|
|
|
Pubbl/distr/stampa |
|
|
[Place of publication not identified], : I E E E, 2000 |
|
|
|
|
|
|
|
Descrizione fisica |
|
|
|
|
|
|
Disciplina |
|
|
|
|
|
|
Soggetti |
|
|
|
|
|
|
Lingua di pubblicazione |
|
|
|
|
|
|
Formato |
Materiale a stampa |
|
|
|
|
|
Livello bibliografico |
Monografia |
|
|
|
|
|
Note generali |
|
Bibliographic Level Mode of Issuance: Monograph |
|
|
|
|
|
|
Nota di contenuto |
|
Advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; High speed laser diodes, optical modulators and photodetectors; Si and SiGe based devices for RF and optoelectronics applications; Modelling of microwave and optoelectronic devices; Wide bandgap devices for microwave and optoelectronic applications; Novel material (semiconductor/polymer/amorphous) optoelectronic and microwave devices; Low distortion microwave devices for efficient mixer and power amplifier applications; Optical control of microwave and mm-wave devices; Microwave and optoelectronic photonic crystal devices; Components for fibre radio applications. |
|
|
|
|
|
|
|
|
Sommario/riassunto |
|
These conference proceedings examine such topics as: advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; high speed laser diodes, optical modulators and photodetectors; and microwave and optoelectronic photonic crystal devices. |
|
|
|
|
|
|
|