LEADER 02142oam  2200397zu 450 
001 996217258703316
005 20210807003444.0
035   $a(CKB)111026746730680
035   $a(SSID)ssj0000454764
035   $a(PQKBManifestationID)12173462
035   $a(PQKBTitleCode)TC0000454764
035   $a(PQKBWorkID)10397579
035   $a(PQKB)10821423
035   $a(NjHacI)99111026746730680
035   $a(EXLCZ)99111026746730680
100   $a20160829d2000      uy              
101 0 $aeng
135   $aur|||||||||||
181   $ctxt
182   $cc
183   $acr
200 10$a2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications
210 31$a[Place of publication not identified]$cI E E E$d2000
215   $a1 online resource
300   $aBibliographic Level Mode of Issuance: Monograph
311   $a0-7803-6550-X 
327   $aAdvances in III-V transistors (HEMTs and HBTs) for mm-wave applications; High speed laser diodes, optical modulators and photodetectors; Si and SiGe based devices for RF and optoelectronics applications; Modelling of microwave and optoelectronic devices; Wide bandgap devices for microwave and optoelectronic applications; Novel material (semiconductor/polymer/amorphous) optoelectronic and microwave devices; Low distortion microwave devices for efficient mixer and power amplifier applications; Optical control of microwave and mm-wave devices; Microwave and optoelectronic photonic crystal devices; Components for fibre radio applications.
330   $aThese conference proceedings examine such topics as: advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; high speed laser diodes, optical modulators and photodetectors; and microwave and optoelectronic photonic crystal devices.
606   $aOptoelectronics$vCongresses
615  0$aOptoelectronics
676   $a621.381045
801  0$bPQKB
906   $aPROCEEDING
912   $a996217258703316
996   $a2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications$92523810
997   $aUNISA