02142oam 2200397zu 450 99621725870331620210807003444.0(CKB)111026746730680(SSID)ssj0000454764(PQKBManifestationID)12173462(PQKBTitleCode)TC0000454764(PQKBWorkID)10397579(PQKB)10821423(NjHacI)99111026746730680(EXLCZ)9911102674673068020160829d2000 uy engur|||||||||||txtccr2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications[Place of publication not identified]I E E E20001 online resourceBibliographic Level Mode of Issuance: Monograph0-7803-6550-X Advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; High speed laser diodes, optical modulators and photodetectors; Si and SiGe based devices for RF and optoelectronics applications; Modelling of microwave and optoelectronic devices; Wide bandgap devices for microwave and optoelectronic applications; Novel material (semiconductor/polymer/amorphous) optoelectronic and microwave devices; Low distortion microwave devices for efficient mixer and power amplifier applications; Optical control of microwave and mm-wave devices; Microwave and optoelectronic photonic crystal devices; Components for fibre radio applications.These conference proceedings examine such topics as: advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; high speed laser diodes, optical modulators and photodetectors; and microwave and optoelectronic photonic crystal devices.OptoelectronicsCongressesOptoelectronics621.381045PQKBPROCEEDING9962172587033162000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications2523810UNISA