Silicon-germanium (SiGe) nanostructures : production, properties and applications in electronics / / edited by Yasuhiro Shiraki and Noritaka Usami

• Pubblicazione: Oxford, : Woodhead Pub., 2011
• Descrizione fisica: 1 online resource (649 p.)
• Disciplina: 620.118
• Soggetto topico: Nanostructured materials; Silicon alloys; Germanium alloys; Electronic circuits; Nanoelectronics
• Altri autori: ShirakiYasuhiro UsamiNoritaka
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: pt. 1. Introduction -- pt. 2. Formation of nanostructures -- pt. 3. Material properties of SiGe nanostructures -- pt. 4. Devices using silicon, germanium and silicon-germanium (Si, Ge and SiGe) alloys.
• Sommario/riassunto: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as mole
• Titolo autorizzato: Silicon-germanium (SiGe) nanostructures
• ISBN: 0-85709-142-5; 1-61344-372-2
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9911004730303321
• Lo trovi qui: Univ. Federico II
• Serie: Woodhead Publishing Series in Electronic and Optical Materials