02748nam 2200637 a 450 991100473030332120200520144314.00-85709-142-51-61344-372-2(CKB)3190000000024709(EBL)1584690(OCoLC)867317558(SSID)ssj0000630104(PQKBManifestationID)11451470(PQKBTitleCode)TC0000630104(PQKBWorkID)10744771(PQKB)11676664(MiAaPQ)EBC1584690(WaSeSS)Ind00031063(EXLCZ)99319000000002470920130212d2011 uy 0engur|n|---|||||txtccrSilicon-germanium (SiGe) nanostructures production, properties and applications in electronics /edited by Yasuhiro Shiraki and Noritaka UsamiOxford Woodhead Pub.20111 online resource (649 p.)Woodhead Publishing in materialsDescription based upon print version of record.1-84569-689-1 Includes bibliographical references and index.pt. 1. Introduction -- pt. 2. Formation of nanostructures -- pt. 3. Material properties of SiGe nanostructures -- pt. 4. Devices using silicon, germanium and silicon-germanium (Si, Ge and SiGe) alloys.Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as moleWoodhead Publishing Series in Electronic and Optical MaterialsNanostructured materialsSilicon alloysGermanium alloysElectronic circuitsNanoelectronicsNanostructured materials.Silicon alloys.Germanium alloys.Electronic circuits.Nanoelectronics.620.118Shiraki Yasuhiro1823451Usami Noritaka1823452MiAaPQMiAaPQMiAaPQBOOK9911004730303321Silicon-germanium (SiGe) nanostructures4390109UNINA