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1. |
Record Nr. |
UNISA996390678003316 |
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Autore |
Dugard William <1606-1662.> |
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Titolo |
Rhetorices elementa [[electronic resource] ] : quæstionibus et responsionibus explicata: quæ ita formantur, ut, quæstionibus prorsus omissis, vel neglectis, responsiones solummodò integram rhetorices institutionem Tyronibus exhibeant. Per Guil. Du-Gard. In usum scholæ mercatorum-scissorum |
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Pubbl/distr/stampa |
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Londini, : typis I. Redmayne. Impensis Francisci Eglesfield, ad insigne Calthæ in cœmeterio Paulino, 1673 |
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Edizione |
[Editio septima.] |
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Descrizione fisica |
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Soggetti |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Reproduction of the original in the British Library. |
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Sommario/riassunto |
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2. |
Record Nr. |
UNINA9911004730303321 |
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Titolo |
Silicon-germanium (SiGe) nanostructures : production, properties and applications in electronics / / edited by Yasuhiro Shiraki and Noritaka Usami |
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Pubbl/distr/stampa |
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Oxford, : Woodhead Pub., 2011 |
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ISBN |
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0-85709-142-5 |
1-61344-372-2 |
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Descrizione fisica |
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1 online resource (649 p.) |
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Collana |
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Woodhead Publishing in materials |
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Altri autori (Persone) |
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ShirakiYasuhiro |
UsamiNoritaka |
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Disciplina |
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Soggetti |
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Nanostructured materials |
Silicon alloys |
Germanium alloys |
Electronic circuits |
Nanoelectronics |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Description based upon print version of record. |
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Nota di bibliografia |
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Includes bibliographical references and index. |
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Nota di contenuto |
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pt. 1. Introduction -- pt. 2. Formation of nanostructures -- pt. 3. Material properties of SiGe nanostructures -- pt. 4. Devices using silicon, germanium and silicon-germanium (Si, Ge and SiGe) alloys. |
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Sommario/riassunto |
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Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as mole |
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