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100   $a20130212d2011      uy         0
101 0 $aeng
135   $aur|n|---|||||
181   $ctxt
182   $cc
183   $acr
200 00$aSilicon-germanium (SiGe) nanostructures $eproduction, properties and applications in electronics /$fedited by Yasuhiro Shiraki and Noritaka Usami
210   $aOxford $cWoodhead Pub.$d2011
215   $a1 online resource (649 p.)
225  0$aWoodhead Publishing in materials
300   $aDescription based upon print version of record.
311   $a1-84569-689-1 
320   $aIncludes bibliographical references and index.
327   $apt. 1. Introduction -- pt. 2. Formation of nanostructures -- pt. 3. Material properties of SiGe nanostructures -- pt. 4. Devices using silicon, germanium and silicon-germanium (Si, Ge and SiGe) alloys.
330   $aNanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as mole
410  0$aWoodhead Publishing Series in Electronic and Optical Materials
606   $aNanostructured materials
606   $aSilicon alloys
606   $aGermanium alloys
606   $aElectronic circuits
606   $aNanoelectronics
615  0$aNanostructured materials.
615  0$aSilicon alloys.
615  0$aGermanium alloys.
615  0$aElectronic circuits.
615  0$aNanoelectronics.
676   $a620.118
701   $aShiraki$b Yasuhiro$01823451
701   $aUsami$b Noritaka$01823452
801  0$bMiAaPQ
801  1$bMiAaPQ
801  2$bMiAaPQ
906   $aBOOK
912   $a9911004730303321
996   $aSilicon-germanium (SiGe) nanostructures$94390109
997   $aUNINA