Nanoelectronics : device physics, fabrication, simulation / / Joachim Knoch

• Autore: Knoch Joachim
• Pubblicazione: Berlin, Germany ; ; Boston, Massachusetts : , : De Gruyter, , [2020]; ©2020
• Descrizione fisica: 1 online resource (XVI, 390 p.)
• Disciplina: 621.381
• Soggetto topico: Nanoelectronics
• Soggetto non controllato: Field Effect Transistors; Metal-Oxide Semiconductor; Nanoelectronic Devices; Semiconductor; Transistors; Two-Dimensional Materials
• Classificazione: UK 8300
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Frontmatter -- Preface -- How to Use the Book -- Contents -- 1 Introduction -- 2 Solid-State Physics Foundation -- 3 Semiconductor Fabrication -- 4 Basic Ingredients for Nanoelectronics Devices -- 5 Metal–Oxide–Semiconductor Field-Effect Transistors -- 6 Device Simulation -- 7 Metal–Source–Drain Field-Effect Transistors -- 8 Carbon Nanotube Field-Effect Transistors -- 9 Steep Slope Transistors -- 10 Device Based on Two-Dimensional Materials -- A Color Map for 2D Materials -- Bibliography -- Index
• Sommario/riassunto: The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
• Titolo autorizzato: Nanoelectronics
• ISBN: 3-11-057550-7
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910554227103321
• Lo trovi qui: Univ. Federico II
• Serie: De Gruyter Textbook