Atomic layer deposition for semiconductors / / Cheol Seong Hwang, editor

• Pubblicazione: New York : , : Springer, , 2014
• Edizione: 1st ed. 2014.
• Descrizione fisica: 1 online resource (x, 263 pages) : illustrations (some color)
• Disciplina: 621.38152
• Soggetto topico: Semiconductors - Surfaces
• Persona (resp. second.): HwangCheol Seong
• Note generali: Description based upon print version of record.
• Nota di bibliografia: Includes bibliographical references and index.
• Nota di contenuto: Introduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines.
• Sommario/riassunto: Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
• Titolo autorizzato: Atomic Layer Deposition for Semiconductors
• ISBN: 1-4614-8054-X
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910298642203321
• Lo trovi qui: Univ. Federico II