LEADER 02067oam  2200421   450 
001 9910298642203321
005 20190911103512.0
010   $a1-4614-8054-X
024 7 $a10.1007/978-1-4614-8054-9
035   $a(OCoLC)862822599
035   $a(MiFhGG)GVRL6VJD
035   $a(EXLCZ)992550000001151416
100   $a20130927d2014      uy             0
101 0 $aeng
135   $aurun|---uuuua
181   $ctxt
182   $cc
183   $acr
200 00$aAtomic layer deposition for semiconductors /$fCheol Seong Hwang, editor
205   $a1st ed. 2014.
210  1$aNew York :$cSpringer,$d2014.
215   $a1 online resource (x, 263 pages) $cillustrations (some color)
225 0 $aGale eBooks
300   $aDescription based upon print version of record.
311   $a1-4614-8053-1 
320   $aIncludes bibliographical references and index.
327   $aIntroduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines.
330   $aAtomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.
606   $aSemiconductors$xSurfaces
615  0$aSemiconductors$xSurfaces.
676   $a621.38152
702   $aHwang$b Cheol Seong
801  0$bMiFhGG
801  1$bMiFhGG
906   $aBOOK
912   $a9910298642203321
996   $aAtomic Layer Deposition for Semiconductors$92495567
997   $aUNINA