02067oam 2200421 450 991029864220332120190911103512.01-4614-8054-X10.1007/978-1-4614-8054-9(OCoLC)862822599(MiFhGG)GVRL6VJD(EXLCZ)99255000000115141620130927d2014 uy 0engurun|---uuuuatxtccrAtomic layer deposition for semiconductors /Cheol Seong Hwang, editor1st ed. 2014.New York :Springer,2014.1 online resource (x, 263 pages) illustrations (some color)Gale eBooksDescription based upon print version of record.1-4614-8053-1 Includes bibliographical references and index.Introduction -- Precursors and reaction mechanisms -- ALD simulations -- ALD for mass-production memories (DRAM and Flash) -- ALD for emerging memories -- PcRAM -- FeRAM -- Front end of the line process -- Back end of the line -- ALD machines.Atomic Layer Deposition (ALD) was originally designed for depositing uniform passivation layers over a very large area  for display devices in the late 1970s. Only recently, in the 21st century, has the this technique become popular for high integrated semiconductor memory devices. This book discusses ALD for all modern semiconductor devices, the basic chemistry of ALD, and models of ALD processes. The book also details ALD for both mass produced memories and emerging memories. Each chapter of the book provides history, operating principles, and a full explanation of ALD processes for each device.SemiconductorsSurfacesSemiconductorsSurfaces.621.38152Hwang Cheol SeongMiFhGGMiFhGGBOOK9910298642203321Atomic Layer Deposition for Semiconductors2495567UNINA