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2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications



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Titolo: 2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications Visualizza cluster
Pubblicazione: [Place of publication not identified], : I E E E, 2000
Descrizione fisica: 1 online resource
Disciplina: 621.381045
Soggetto topico: Optoelectronics
Note generali: Bibliographic Level Mode of Issuance: Monograph
Nota di contenuto: Advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; High speed laser diodes, optical modulators and photodetectors; Si and SiGe based devices for RF and optoelectronics applications; Modelling of microwave and optoelectronic devices; Wide bandgap devices for microwave and optoelectronic applications; Novel material (semiconductor/polymer/amorphous) optoelectronic and microwave devices; Low distortion microwave devices for efficient mixer and power amplifier applications; Optical control of microwave and mm-wave devices; Microwave and optoelectronic photonic crystal devices; Components for fibre radio applications.
Sommario/riassunto: These conference proceedings examine such topics as: advances in III-V transistors (HEMTs and HBTs) for mm-wave applications; high speed laser diodes, optical modulators and photodetectors; and microwave and optoelectronic photonic crystal devices.
Titolo autorizzato: 2000 International Symposium on High Performance Electron Devices for Microwave, Optoelectronic Applications  Visualizza cluster
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 996217258703316
Lo trovi qui: Univ. di Salerno
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