Design of shallow p-type dopants in ZnO [[electronic resource] ] : preprint / / S.H. Wei, J. Li, and Y. Yan

• Autore: Wei Su-Huai
• Pubblicazione: Golden, Colo. : , : National Renewable Energy Laboratory, , [2008]
• Descrizione fisica: 1 online resource (4 pages) : illustrations
• Soggetto topico: Semiconductor doping; Doped semiconductors; Crystals - Defects
• Altri autori: LiJian YanYixun
• Note generali: Title from title screen (viewed June 9, 2008).; "May 2008."; "Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008."; "The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337."
• Nota di bibliografia: Includes bibliographical references (page 4).
• Altri titoli varianti: Resolving Environmental and Grid Reliability Conflicts Act of 2012; Design of Shallow P-Type Dopants in ZnO
• Titolo autorizzato: Design of shallow p-type dopants in ZnO
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910698523503321
• Lo trovi qui: Univ. Federico II