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Record Nr. |
UNINA9910698523503321 |
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Autore |
Wei Su-Huai |
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Titolo |
Design of shallow p-type dopants in ZnO [[electronic resource] ] : preprint / / S.H. Wei, J. Li, and Y. Yan |
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Pubbl/distr/stampa |
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Golden, Colo. : , : National Renewable Energy Laboratory, , [2008] |
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Descrizione fisica |
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1 online resource (4 pages) : illustrations |
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Collana |
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Altri autori (Persone) |
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Soggetti |
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Semiconductor doping |
Doped semiconductors |
Crystals - Defects |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Title from title screen (viewed June 9, 2008). |
"May 2008." |
"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008." |
"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337." |
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Nota di bibliografia |
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Includes bibliographical references (page 4). |
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