01881oam 2200493 a 450 991069852350332120120611130656.0(CKB)4330000001805272(OCoLC)231401330(EXLCZ)99433000000180527220080609d2008 ua 0engurmn|||||||||txtrdacontentcrdamediacrrdacarrierDesign of shallow p-type dopants in ZnO[electronic resource] preprint /S.H. Wei, J. Li, and Y. YanGolden, Colo. :National Renewable Energy Laboratory,[2008]1 online resource (4 pages) illustrationsNREL/CP ;590-42522Title from title screen (viewed June 9, 2008)."May 2008.""Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008.""The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337."Includes bibliographical references (page 4).Resolving Environmental and Grid Reliability Conflicts Act of 2012 Design of Shallow P-Type Dopants in ZnO Semiconductor dopingDoped semiconductorsCrystalsDefectsSemiconductor doping.Doped semiconductors.CrystalsDefects.Wei Su-Huai1413284Li Jian846202Yan Yixun1413285National Renewable Energy Laboratory (U.S.)SOESOEGPOBOOK9910698523503321Design of shallow p-type dopants in ZnO3509315UNINA