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101 0 $aeng
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181   $ctxt$2rdacontent
182   $cc$2rdamedia
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200 10$aDesign of shallow p-type dopants in ZnO$b[electronic resource] $epreprint /$fS.H. Wei, J. Li, and Y. Yan
210  1$aGolden, Colo. :$cNational Renewable Energy Laboratory,$d[2008]
215   $a1 online resource (4 pages) $cillustrations
225 1 $aNREL/CP ;$v590-42522
300   $aTitle from title screen (viewed June 9, 2008).
300   $a"May 2008."
300   $a"Presented at the 33rd IEEE Photovoltaic Specialists Conference, San Diego, California, May 11-16, 2008."
300   $a"The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337."
320   $aIncludes bibliographical references (page 4).
517   $aResolving Environmental and Grid Reliability Conflicts Act of 2012 
517   $aDesign of Shallow P-Type Dopants in ZnO 
606   $aSemiconductor doping
606   $aDoped semiconductors
606   $aCrystals$xDefects
615  0$aSemiconductor doping.
615  0$aDoped semiconductors.
615  0$aCrystals$xDefects.
700   $aWei$b Su-Huai$01413284
701   $aLi$b Jian$0846202
701   $aYan$b Yixun$01413285
712 02$aNational Renewable Energy Laboratory (U.S.)
801  0$bSOE
801  1$bSOE
801  2$bGPO
906   $aBOOK
912   $a9910698523503321
996   $aDesign of shallow p-type dopants in ZnO$93509315
997   $aUNINA

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