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Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide [[electronic resource] /] / by Samuel J. Magorrian



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Autore: Magorrian Samuel J Visualizza persona
Titolo: Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide [[electronic resource] /] / by Samuel J. Magorrian Visualizza cluster
Pubblicazione: Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019
Edizione: 1st ed. 2019.
Descrizione fisica: 1 online resource (96 pages)
Disciplina: 530.41
Soggetto topico: Surfaces (Physics)
Interfaces (Physical sciences)
Thin films
Solid state physics
Mathematical physics
Surface and Interface Science, Thin Films
Solid State Physics
Theoretical, Mathematical and Computational Physics
Nota di contenuto: Part I: Introduction and basics -- Scientific context and motivation -- Laser-plasmas -- Part II: Experimental methods -- High-power lasers -- Transportable Paul trap for isolated micro-targets in vacuum -- Part III: Laser-microplasma interactions -- Laser-driven ion acceleration using isolated micro-sphere targets -- Laser-driven micro-source for bi-modal radiographic imaging -- Part IV: Summary and perspectives -- Summary -- Challenges and perspectives -- Appendix.
Sommario/riassunto: This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions. .
Titolo autorizzato: Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide  Visualizza cluster
ISBN: 3-030-25715-0
Formato: Materiale a stampa
Livello bibliografico Monografia
Lingua di pubblicazione: Inglese
Record Nr.: 9910349513703321
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Serie: Springer Theses, Recognizing Outstanding Ph.D. Research, . 2190-5053