03998nam 22005775 450 991034951370332120200704142629.03-030-25715-010.1007/978-3-030-25715-6(CKB)4100000009040251(MiAaPQ)EBC5850803(DE-He213)978-3-030-25715-6(PPN)269145192(EXLCZ)99410000000904025120190813d2019 u| 0engurcnu||||||||txtrdacontentcrdamediacrrdacarrierTheory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide[electronic resource] /by Samuel J. Magorrian1st ed. 2019.Cham :Springer International Publishing :Imprint: Springer,2019.1 online resource (96 pages)Springer Theses, Recognizing Outstanding Ph.D. Research,2190-50533-030-25714-2 Part I: Introduction and basics -- Scientiļ¬c context and motivation -- Laser-plasmas -- Part II: Experimental methods -- High-power lasers -- Transportable Paul trap for isolated micro-targets in vacuum -- Part III: Laser-microplasma interactions -- Laser-driven ion acceleration using isolated micro-sphere targets -- Laser-driven micro-source for bi-modal radiographic imaging -- Part IV: Summary and perspectives -- Summary -- Challenges and perspectives -- Appendix.This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions. .Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053Surfaces (Physics)Interfaces (Physical sciences)Thin filmsSolid state physicsMathematical physicsSurface and Interface Science, Thin Filmshttps://scigraph.springernature.com/ontologies/product-market-codes/P25160Solid State Physicshttps://scigraph.springernature.com/ontologies/product-market-codes/P25013Theoretical, Mathematical and Computational Physicshttps://scigraph.springernature.com/ontologies/product-market-codes/P19005Surfaces (Physics).Interfaces (Physical sciences).Thin films.Solid state physics.Mathematical physics.Surface and Interface Science, Thin Films.Solid State Physics.Theoretical, Mathematical and Computational Physics.530.41Magorrian Samuel Jauthttp://id.loc.gov/vocabulary/relators/aut838598BOOK9910349513703321Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide1873096UNINA