LEADER 03998nam  22005775  450 
001 9910349513703321
005 20200704142629.0
010   $a3-030-25715-0
024 7 $a10.1007/978-3-030-25715-6
035   $a(CKB)4100000009040251
035   $a(MiAaPQ)EBC5850803
035   $a(DE-He213)978-3-030-25715-6
035   $a(PPN)269145192
035   $a(EXLCZ)994100000009040251
100   $a20190813d2019      u|             0
101 0 $aeng
135   $aurcnu||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aTheory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide$b[electronic resource] /$fby Samuel J. Magorrian
205   $a1st ed. 2019.
210  1$aCham :$cSpringer International Publishing :$cImprint: Springer,$d2019.
215   $a1 online resource (96 pages)
225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
311   $a3-030-25714-2 
327   $aPart I: Introduction and basics -- Scienti?c context and motivation -- Laser-plasmas -- Part II: Experimental methods -- High-power lasers -- Transportable Paul trap for isolated micro-targets in vacuum -- Part III: Laser-microplasma interactions -- Laser-driven ion acceleration using isolated micro-sphere targets -- Laser-driven micro-source for bi-modal radiographic imaging -- Part IV: Summary and perspectives -- Summary -- Challenges and perspectives -- Appendix.
330   $aThis thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions. .
410  0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053
606   $aSurfaces (Physics)
606   $aInterfaces (Physical sciences)
606   $aThin films
606   $aSolid state physics
606   $aMathematical physics
606   $aSurface and Interface Science, Thin Films$3https://scigraph.springernature.com/ontologies/product-market-codes/P25160
606   $aSolid State Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P25013
606   $aTheoretical, Mathematical and Computational Physics$3https://scigraph.springernature.com/ontologies/product-market-codes/P19005
615  0$aSurfaces (Physics).
615  0$aInterfaces (Physical sciences).
615  0$aThin films.
615  0$aSolid state physics.
615  0$aMathematical physics.
615 14$aSurface and Interface Science, Thin Films.
615 24$aSolid State Physics.
615 24$aTheoretical, Mathematical and Computational Physics.
676   $a530.41
700   $aMagorrian$b Samuel J$4aut$4http://id.loc.gov/vocabulary/relators/aut$0838598
906   $aBOOK
912   $a9910349513703321
996   $aTheory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide$91873096
997   $aUNINA