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Record Nr. |
UNINA9910349513703321 |
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Autore |
Magorrian Samuel J |
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Titolo |
Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide [[electronic resource] /] / by Samuel J. Magorrian |
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Pubbl/distr/stampa |
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Cham : , : Springer International Publishing : , : Imprint : Springer, , 2019 |
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ISBN |
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Edizione |
[1st ed. 2019.] |
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Descrizione fisica |
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1 online resource (96 pages) |
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Collana |
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Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5053 |
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Disciplina |
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Soggetti |
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Surfaces (Physics) |
Interfaces (Physical sciences) |
Thin films |
Solid state physics |
Mathematical physics |
Surface and Interface Science, Thin Films |
Solid State Physics |
Theoretical, Mathematical and Computational Physics |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Nota di contenuto |
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Part I: Introduction and basics -- Scientiļ¬c context and motivation -- Laser-plasmas -- Part II: Experimental methods -- High-power lasers -- Transportable Paul trap for isolated micro-targets in vacuum -- Part III: Laser-microplasma interactions -- Laser-driven ion acceleration using isolated micro-sphere targets -- Laser-driven micro-source for bi-modal radiographic imaging -- Part IV: Summary and perspectives -- Summary -- Challenges and perspectives -- Appendix. |
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Sommario/riassunto |
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This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness |
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predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions. . |
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