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Autore: | Li Zhiqiang |
Titolo: | The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices / / by Zhiqiang Li |
Pubblicazione: | Berlin, Heidelberg : , : Springer Berlin Heidelberg : , : Imprint : Springer, , 2016 |
Edizione: | 1st ed. 2016. |
Descrizione fisica: | 1 online resource (71 p.) |
Disciplina: | 530 |
Soggetto topico: | Semiconductors |
Electronic circuits | |
Nanoscale science | |
Nanoscience | |
Nanostructures | |
Solid state physics | |
Electronic Circuits and Devices | |
Nanoscale Science and Technology | |
Solid State Physics | |
Note generali: | Description based upon print version of record. |
Nota di bibliografia: | Includes bibliographical references. |
Nota di contenuto: | Introduction -- Ge-based Schottky barrier height modulation technology -- Metal germanide technology -- Contact resistance of Ge-based devices -- Conclusions. |
Sommario/riassunto: | This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node. |
Titolo autorizzato: | The Source |
ISBN: | 3-662-49683-6 |
Formato: | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910254623803321 |
Lo trovi qui: | Univ. Federico II |
Opac: | Controlla la disponibilità qui |