Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra
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| Autore: |
Niedra Janis M
|
| Titolo: |
Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra
|
| Pubblicazione: | Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] |
| Descrizione fisica: | 1 online resource (11 pages) : illustrations |
| Soggetto topico: | Junction transistors |
| Temperature measurement | |
| Bipolar transistors | |
| Electric potential | |
| Pulse amplitude | |
| Thermal resistance | |
| Silicon carbides | |
| Note generali: | Title from title screen (viewed on May 16, 2012). |
| "November 2006." | |
| "Preparing organization, QSS Group, Inc."--Rept. documentation p. | |
| Nota di bibliografia: | Includes bibliographical references (page 11). |
| Titolo autorizzato: | Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910699314003321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
NASA contractor report ; ; NASA CR-2006-214228.