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Record Nr. |
UNINA9910699314003321 |
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Autore |
Niedra Janis M |
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Titolo |
Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured [[electronic resource] /] / Janis M. Niedra |
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Pubbl/distr/stampa |
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Cleveland, Ohio : , : National Aeronautics and Space Administration, Glenn Research Center, , [2006] |
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Descrizione fisica |
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1 online resource (11 pages) : illustrations |
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Collana |
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Soggetti |
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Junction transistors |
Temperature measurement |
Bipolar transistors |
Electric potential |
Pulse amplitude |
Thermal resistance |
Silicon carbides |
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Lingua di pubblicazione |
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Formato |
Materiale a stampa |
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Livello bibliografico |
Monografia |
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Note generali |
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Title from title screen (viewed on May 16, 2012). |
"November 2006." |
"Preparing organization, QSS Group, Inc."--Rept. documentation p. |
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Nota di bibliografia |
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Includes bibliographical references (page 11). |
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