LEADER 01967nam  2200541 a 450 
001 9910699314003321
005 20230902161936.0
035   $a(CKB)5470000002402780
035   $a(OCoLC)793738147
035   $a(EXLCZ)995470000002402780
100   $a20120516d2006      ua             0
101 0 $aeng
135   $aurbn|||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aJunction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured$b[electronic resource] /$fJanis M. Niedra
210  1$aCleveland, Ohio :$cNational Aeronautics and Space Administration, Glenn Research Center,$d[2006]
215   $a1 online resource (11 pages) $cillustrations
225 1 $aNASA/CR ;$v2006-214258
300   $aTitle from title screen (viewed on May 16, 2012).
300   $a"November 2006."
300   $a"Preparing organization, QSS Group, Inc."--Rept. documentation p.
320   $aIncludes bibliographical references (page 11).
410  0$aNASA contractor report ;$vNASA CR-2006-214228.
606   $aJunction transistors$2nasat
606   $aTemperature measurement$2nasat
606   $aBipolar transistors$2nasat
606   $aElectric potential$2nasat
606   $aPulse amplitude$2nasat
606   $aThermal resistance$2nasat
606   $aSilicon carbides$2nasat
615  7$aJunction transistors.
615  7$aTemperature measurement.
615  7$aBipolar transistors.
615  7$aElectric potential.
615  7$aPulse amplitude.
615  7$aThermal resistance.
615  7$aSilicon carbides.
700   $aNiedra$b Janis M$01389258
712 02$aNASA Glenn Research Center.
712 02$aQSS Group, Inc.
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910699314003321
996   $aJunction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured$93440551
997   $aUNINA