01967nam 2200541 a 450 991069931400332120230902161936.0(CKB)5470000002402780(OCoLC)793738147(EXLCZ)99547000000240278020120516d2006 ua 0engurbn|||||||||txtrdacontentcrdamediacrrdacarrierJunction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured[electronic resource] /Janis M. NiedraCleveland, Ohio :National Aeronautics and Space Administration, Glenn Research Center,[2006]1 online resource (11 pages) illustrationsNASA/CR ;2006-214258Title from title screen (viewed on May 16, 2012)."November 2006.""Preparing organization, QSS Group, Inc."--Rept. documentation p.Includes bibliographical references (page 11).NASA contractor report ;NASA CR-2006-214228.Junction transistorsnasatTemperature measurementnasatBipolar transistorsnasatElectric potentialnasatPulse amplitudenasatThermal resistancenasatSilicon carbidesnasatJunction transistors.Temperature measurement.Bipolar transistors.Electric potential.Pulse amplitude.Thermal resistance.Silicon carbides.Niedra Janis M1389258NASA Glenn Research Center.QSS Group, Inc.GPOGPOBOOK9910699314003321Junction-to-case thermal resistance of a silicon carbide bipolar junction transistor measured3440551UNINA