Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals / / by Daniel Montero Álvarez
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| Autore: |
Montero Alvarez Daniel
|
| Titolo: |
Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals / / by Daniel Montero Álvarez
|
| Pubblicazione: | Cham : , : Springer International Publishing : , : Imprint : Springer, , 2021 |
| Edizione: | 1st ed. 2021. |
| Descrizione fisica: | 1 online resource (XXXVI, 230 p. 137 illus., 124 illus. in color.) |
| Disciplina: | 620.11297 |
| Soggetto topico: | Optical materials |
| Chemical detectors | |
| Materials | |
| Photonics | |
| Electronics - Materials | |
| Optical Materials | |
| Sensors | |
| Photonic Devices | |
| Electronic Materials | |
| Nota di bibliografia: | Includes bibliographical references. |
| Nota di contenuto: | Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix. |
| Sommario/riassunto: | This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors. |
| Titolo autorizzato: | Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals |
| ISBN: | 3-030-63826-X |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910484116603321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |
Serie:
Springer Theses, Recognizing Outstanding Ph.D. Research, . 2190-5061