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[null,"1.","Record Nr.",null,"UNINA9910484116603321"]
[null,null,"Autore",null,"Montero Alvarez Daniel"]
[null,null,"Titolo",null,"Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals / / by Daniel Montero Álvarez"]
[null,null,"Pubbl/distr/stampa",null,"Cham : , : Springer International Publishing : , : Imprint : Springer, , 2021"]
[null,null,"ISBN",null,"3-030-63826-X"]
[null,null,"Edizione",null,"[1st ed. 2021.]"]
[null,null,"Descrizione fisica",null,"1 online resource (XXXVI, 230 p. 137 illus., 124 illus. in color.)"]
[null,null,"Collana",null,"Springer Theses, Recognizing Outstanding Ph.D. Research, , 2190-5061"]
[null,null,"Disciplina",null,"620.11297"]
[null,null,"Soggetti",null,"Optical materials"]
[{"$nulls":4},"Chemical detectors"]
[{"$nulls":4},"Materials"]
[{"$nulls":4},"Photonics"]
[{"$nulls":4},"Electronics - Materials"]
[{"$nulls":4},"Optical Materials"]
[{"$nulls":4},"Sensors"]
[{"$nulls":4},"Photonic Devices"]
[{"$nulls":4},"Electronic Materials"]
[null,null,"Lingua di pubblicazione",null,"Inglese"]
[null,null,"Formato",null,"Materiale a stampa"]
[null,null,null,"Livello bibliografico","Monografia"]
[null,null,null,"Nota di bibliografia","Includes bibliographical references."]
[null,null,"Nota di contenuto",null,"Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix."]
[null,null,null,"Sommario/riassunto","This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with "]
[{"$nulls":4},"STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors."]