03171oam 2200493 450 991048411660332120210617145940.03-030-63826-X10.1007/978-3-030-63826-9(CKB)4100000011704558(DE-He213)978-3-030-63826-9(MiAaPQ)EBC6452749(PPN)253250935(EXLCZ)99410000001170455820210617d2021 uy 0engurnn|008mamaatxtrdacontentcrdamediacrrdacarrierNear infrared detectors based on silicon supersaturated with transition metals doctoral thesis accepted by universidad complutense de madrid, madrid, spain /Daniel Montero Álvarez1st ed. 2021.Cham, Switzerland :Springer,[2021]©20211 online resource (XXXVI, 230 p. 137 illus., 124 illus. in color.) Springer Theses, Recognizing Outstanding Ph.D. Research,2190-50533-030-63825-1 Includes bibliographical references.Introduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix.This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.Springer Theses, Recognizing Outstanding Ph.D. Research,2190-5053Silicon compoundsInfrared detectorsMaterialsSilicon compounds.Infrared detectorsMaterials.620.11297Montero Álvarez Daniel1227150MiAaPQMiAaPQUtOrBLWBOOK9910484116603321Near infrared detectors based on silicon supersaturated with transition metals2849446UNINA