LEADER 03171oam 2200493 450 001 9910484116603321 005 20210617145940.0 010 $a3-030-63826-X 024 7 $a10.1007/978-3-030-63826-9 035 $a(CKB)4100000011704558 035 $a(DE-He213)978-3-030-63826-9 035 $a(MiAaPQ)EBC6452749 035 $a(PPN)253250935 035 $a(EXLCZ)994100000011704558 100 $a20210617d2021 uy 0 101 0 $aeng 135 $aurnn|008mamaa 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aNear infrared detectors based on silicon supersaturated with transition metals $edoctoral thesis accepted by universidad complutense de madrid, madrid, spain /$fDaniel Montero Álvarez 205 $a1st ed. 2021. 210 1$aCham, Switzerland :$cSpringer,$d[2021] 210 4$d©2021 215 $a1 online resource (XXXVI, 230 p. 137 illus., 124 illus. in color.) 225 1 $aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053 311 $a3-030-63825-1 320 $aIncludes bibliographical references. 327 $aIntroduction -- Experimental techniques -- Results: NLA using a short pulse duration KrF laser -- Results: NLA using a long pulse duration XeCl laser -- Results: Integrating the supersaturated material in a CMOS pixel matrix. 330 $aThis thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors. 410 0$aSpringer Theses, Recognizing Outstanding Ph.D. Research,$x2190-5053 606 $aSilicon compounds 606 $aInfrared detectors$xMaterials 615 0$aSilicon compounds. 615 0$aInfrared detectors$xMaterials. 676 $a620.11297 700 $aMontero Álvarez$b Daniel$01227150 801 0$bMiAaPQ 801 1$bMiAaPQ 801 2$bUtOrBLW 906 $aBOOK 912 $a9910484116603321 996 $aNear infrared detectors based on silicon supersaturated with transition metals$92849446 997 $aUNINA