Development of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors / / Vijay Parameshwaran [and six others]
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| Autore: |
Parameshwaran Vijay
|
| Titolo: |
Development of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors / / Vijay Parameshwaran [and six others]
|
| Pubblicazione: | Adelphi, MD : , : US Army Research Laboratory, , December 2017 |
| Descrizione fisica: | 1 online resource (vi, 10 pages) : illustrations |
| Soggetto topico: | Photoelectrochemistry |
| Nitrides | |
| Inhomogeneous materials | |
| Note generali: | "ARL-TR-8228." |
| "Dec 2017." | |
| Includes tables. | |
| Nota di bibliografia: | Includes bibliographical references (page 8). |
| Titolo autorizzato: | Development of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910706902403321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |