01460nam 2200409I 450 991070690240332120190228144359.0(CKB)5470000002460459(OCoLC)1088728495(EXLCZ)99547000000246045920190228j201712 ua 0engur|||||||||||txtrdacontentcrdamediacrrdacarrierDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors /Vijay Parameshwaran [and six others]Adelphi, MD :US Army Research Laboratory,December 2017.1 online resource (vi, 10 pages) illustrations"ARL-TR-8228.""Dec 2017."Includes tables.Includes bibliographical references (page 8).PhotoelectrochemistryNitridesInhomogeneous materialsPhotoelectrochemistry.Nitrides.Inhomogeneous materials.Parameshwaran Vijay1408090U.S. Army Research Laboratory,GPOGPOBOOK9910706902403321Development of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors3491154UNINA