LEADER 01000nam a2200265 i 4500 001 991002570299707536 005 20020503170810.0 008 010104s1910 it ||| | ita 035 $ab10383566-39ule_inst 035 $aEXGIL106102$9ExL 040 $aBiblioteca Interfacoltà$bita 082 0 $a232 100 1 $aSeeley, John Robert$0139499 245 10$aEcce homo :$bun esame della vita e dell'opera di Gesù Cristo /$cJ.R. Seeley ; tradotto sull'ultima edizione inglese da Guglielmo Salvatori 260 $aTorino :$bBocca,$c1910 300 $aXL, 420 p. ;$c19 cm. 490 0 $aPiccola biblioteca di scienze moderne ;$v184 650 4$aGesù Cristo 700 1 $aSalvadori, Guglielmo 907 $a.b10383566$b21-02-17$c27-06-02 912 $a991002570299707536 945 $aLE002 Fil. VIII L 42$g1$i2002000528360$lle002$o-$pE0.00$q-$rn$so $t0$u1$v1$w1$x0$y.i10448421$z27-06-02 996 $aEcce homo$9202245 997 $aUNISALENTO 998 $ale002$b01-01-01$cm$da $e-$fita$git $h0$i1 LEADER 01460nam 2200409I 450 001 9910706902403321 005 20190228144359.0 035 $a(CKB)5470000002460459 035 $a(OCoLC)1088728495 035 $a(EXLCZ)995470000002460459 100 $a20190228j201712 ua 0 101 0 $aeng 135 $aur||||||||||| 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors /$fVijay Parameshwaran [and six others] 210 1$aAdelphi, MD :$cUS Army Research Laboratory,$dDecember 2017. 215 $a1 online resource (vi, 10 pages) $cillustrations 300 $a"ARL-TR-8228." 300 $a"Dec 2017." 300 $aIncludes tables. 320 $aIncludes bibliographical references (page 8). 606 $aPhotoelectrochemistry 606 $aNitrides 606 $aInhomogeneous materials 615 0$aPhotoelectrochemistry. 615 0$aNitrides. 615 0$aInhomogeneous materials. 700 $aParameshwaran$b Vijay$01408090 712 02$aU.S. Army Research Laboratory, 801 0$bGPO 801 1$bGPO 906 $aBOOK 912 $a9910706902403321 996 $aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors$93491154 997 $aUNINA