LEADER 01460nam  2200409I  450 
001 9910706902403321
005 20190228144359.0
035   $a(CKB)5470000002460459
035   $a(OCoLC)1088728495
035   $a(EXLCZ)995470000002460459
100   $a20190228j201712    ua             0
101 0 $aeng
135   $aur|||||||||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors /$fVijay Parameshwaran [and six others]
210  1$aAdelphi, MD :$cUS Army Research Laboratory,$dDecember 2017.
215   $a1 online resource (vi, 10 pages) $cillustrations
300   $a"ARL-TR-8228."
300   $a"Dec 2017."
300   $aIncludes tables.
320   $aIncludes bibliographical references (page 8).
606   $aPhotoelectrochemistry
606   $aNitrides
606   $aInhomogeneous materials
615  0$aPhotoelectrochemistry.
615  0$aNitrides.
615  0$aInhomogeneous materials.
700   $aParameshwaran$b Vijay$01408090
712 02$aU.S. Army Research Laboratory,
801  0$bGPO
801  1$bGPO
906   $aBOOK
912   $a9910706902403321
996   $aDevelopment of a photoelectrochemical etch process to enable heterogeneous substrate integration of epitaxial III-nitride semiconductors$93491154
997   $aUNINA