Observation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide / / Fred Semendy and Unchal Lee
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| Autore: |
Semendy Fred
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| Titolo: |
Observation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide / / Fred Semendy and Unchal Lee
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| Pubblicazione: | Adelphi, MD : , : Army Research Laboratory, , [2007] |
| Descrizione fisica: | 1 online resource (iv, 12 pages) : illustrations (some color) |
| Soggetto topico: | Gallium nitride - Etching |
| Dislocations in crystals | |
| Persona (resp. second.): | LeeUnchul |
| Note generali: | Title from title screen (viewed on Dec. 17, 2014). |
| "June 2007." | |
| Nota di bibliografia: | Includes bibliographical references (page 9). |
| Titolo autorizzato: | Observation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910702704403321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |