01554oam 2200421I 450 991070270440332120141217152759.0(CKB)5470000002431097(OCoLC)227939877(EXLCZ)99547000000243109720080513d2007 ua 0engurmn||||a||||txtrdacontentcrdamediacrrdacarrierObservation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide /Fred Semendy and Unchal LeeAdelphi, MD :Army Research Laboratory,[2007]1 online resource (iv, 12 pages) illustrations (some color)ARL-TR ;4164Title from title screen (viewed on Dec. 17, 2014)."June 2007."Includes bibliographical references (page 9).Gallium nitrideEtchingDislocations in crystalsGallium nitrideEtching.Dislocations in crystals.Semendy Fred1386303Lee UnchulU.S. Army Research Laboratory,DTICEDTICEOCLCQGPOBOOK9910702704403321Observation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide3467320UNINA