LEADER 01554oam  2200421I  450 
001 9910702704403321
005 20141217152759.0
035   $a(CKB)5470000002431097
035   $a(OCoLC)227939877
035   $a(EXLCZ)995470000002431097
100   $a20080513d2007      ua             0
101 0 $aeng
135   $aurmn||||a||||
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aObservation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide /$fFred Semendy and Unchal Lee
210  1$aAdelphi, MD :$cArmy Research Laboratory,$d[2007]
215   $a1 online resource (iv, 12 pages) $cillustrations (some color)
225 1 $aARL-TR ;$v4164
300   $aTitle from title screen (viewed on Dec. 17, 2014).
300   $a"June 2007."
320   $aIncludes bibliographical references (page 9).
606   $aGallium nitride$xEtching
606   $aDislocations in crystals
615  0$aGallium nitride$xEtching.
615  0$aDislocations in crystals.
700   $aSemendy$b Fred$01386303
702   $aLee$b Unchul
712 02$aU.S. Army Research Laboratory,
801  0$bDTICE
801  1$bDTICE
801  2$bOCLCQ
801  2$bGPO
906   $aBOOK
912   $a9910702704403321
996   $aObservation and study of dislocation etch pits in molecular beam epitaxy grown gallium nitride with the use of phosphoric acid and molten potassium hydroxide$93467320
997   $aUNINA