Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich

• Autore: Diebold Sebastian
• Pubblicazione: KIT Scientific Publishing, 2013
• Descrizione fisica: 1 electronic resource (XIII, 217 p. p.)
• Soggetto non controllato: power amplifier; III-V semiconductor; HEMT; millimetre-wave; koplanarer Wellenleiter; monolithic integrated; mHEMT; Verbindungshalbleiter; Mikrostreifenleitung; coplanar waveguide; FETmillimeterwave; Terahertz; microstrip transmission line; 3-5; MMIC; Leistungsverstärker; Millimeterwelle
• Sommario/riassunto: The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative coupler concept is developed. It is tailor-made for the applied MMIC-technology and the frequency range. Based on this coupler, a novel amplifier topology has been established and applied.
• Titolo autorizzato: Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich
• ISBN: 1000037898
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Tedesco
• Record Nr.: 9910347055603321
• Lo trovi qui: Univ. Federico II