LEADER 02327nam  2200541z- 450 
001 9910347055603321
005 20210212
010   $a1000037898
035   $a(CKB)4920000000101960
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/61216
035   $a(oapen)doab61216
035   $a(EXLCZ)994920000000101960
100   $a20202102d2013      |y         0
101 0 $ager
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 00$aTransistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsversta?rkern fu?r den hohen Millimeterwellen-Frequenzbereich
210   $cKIT Scientific Publishing$d2013
215   $a1 online resource (XIII, 217 p. p.)
225 1 $aKarlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik
311 08$a3-7315-0161-9 
330   $aThe aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative coupler concept is developed. It is tailor-made for the applied MMIC-technology and the frequency range. Based on this coupler, a novel amplifier topology has been established and applied.
606   $aTechnology: general issues$2bicssc
610   $a3-5
610   $acoplanar waveguide
610   $aFETmillimeterwave
610   $aHEMT
610   $aIII-V semiconductor
610   $akoplanarer Wellenleiter
610   $aLeistungsversta?rker
610   $amHEMT
610   $amicrostrip transmission line
610   $aMikrostreifenleitung
610   $aMillimeterwelle
610   $amillimetre-wave
610   $aMMIC
610   $amonolithic integrated
610   $apower amplifier
610   $aTerahertz
610   $aVerbindungshalbleiter
615  7$aTechnology: general issues
700   $aDiebold$b Sebastian$4auth$01312688
906   $aBOOK
912   $a9910347055603321
996   $aTransistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich$93030915
997   $aUNINA