02327nam 2200541z- 450 9910347055603321202102121000037898(CKB)4920000000101960(oapen)https://directory.doabooks.org/handle/20.500.12854/61216(oapen)doab61216(EXLCZ)99492000000010196020202102d2013 |y 0gerurmn|---annantxtrdacontentcrdamediacrrdacarrierTransistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-FrequenzbereichKIT Scientific Publishing20131 online resource (XIII, 217 p. p.)Karlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik3-7315-0161-9 The aim of this work is the design of monolithic integrated power amplifiers for frequencies from 200 to 250 GHz and beyond. For this, reliable and flexible transmission line and transistor models are required. The models are created and their accuracy is verified up to 325 GHz. An innovative coupler concept is developed. It is tailor-made for the applied MMIC-technology and the frequency range. Based on this coupler, a novel amplifier topology has been established and applied.Technology: general issuesbicssc3-5coplanar waveguideFETmillimeterwaveHEMTIII-V semiconductorkoplanarer WellenleiterLeistungsverstärkermHEMTmicrostrip transmission lineMikrostreifenleitungMillimeterwellemillimetre-waveMMICmonolithic integratedpower amplifierTerahertzVerbindungshalbleiterTechnology: general issuesDiebold Sebastianauth1312688BOOK9910347055603321Transistor- und Leitungsmodellierung zum Entwurf von monolithisch integrierten Leistungsverstärkern für den hohen Millimeterwellen-Frequenzbereich3030915UNINA