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Autore: | Cheng Jie |
Titolo: | Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect / / by Jie Cheng |
Pubblicazione: | Singapore : , : Springer Singapore : , : Imprint : Springer, , 2018 |
Edizione: | 1st ed. 2018. |
Descrizione fisica: | 1 online resource (XVIII, 137 p. 103 illus.) |
Disciplina: | 621.38152 |
Soggetto topico: | Manufactures |
Tribology | |
Corrosion and anti-corrosives | |
Coatings | |
Electronics | |
Microelectronics | |
Manufacturing, Machines, Tools, Processes | |
Tribology, Corrosion and Coatings | |
Electronics and Microelectronics, Instrumentation | |
Nota di bibliografia: | Includes bibliographical references. |
Sommario/riassunto: | This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research. |
Titolo autorizzato: | Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect |
ISBN: | 981-10-6165-3 |
Formato: | Materiale a stampa |
Livello bibliografico | Monografia |
Lingua di pubblicazione: | Inglese |
Record Nr.: | 9910299588803321 |
Lo trovi qui: | Univ. Federico II |
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