Fundamentals and Recent Advances in Epitaxial Graphene on SiC

• Autore: Yakimova Rositsa
• Pubblicazione: Basel, Switzerland, : MDPI - Multidisciplinary Digital Publishing Institute, 2021
• Descrizione fisica: 1 online resource (94 p.)
• Soggetto topico: Technology: general issues
• Soggetto non controllato: 2D peak line shape; 3C-SiC on Si; AFM; atomic layer deposition; buffer layer; carrier concentration; charge density; chronoamperometry; copper; deposition; DFT; electrodeposition; electronic properties; epitaxial graphene; epitaxial graphene on SiC; flat band; free charge carrier properties; G peak; graphene; high-k insulators; high-temperature sublimation; intercalation; ion implantation; material engineering; mobility; monolayer graphene; quasi-free-standing graphene; Raman; Raman spectroscopy; redox reaction; SiC; silicon carbide; strain; sublimation; substrate interaction; surface functionalization; terahertz optical Hall effect; twisted bilayer graphene; twistronics; voltammetry; XPS
• Persona (resp. second.): ShtepliukIvan; YakimovaRositsa
• Sommario/riassunto: This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.
• Titolo autorizzato: Fundamentals and Recent Advances in Epitaxial Graphene on SiC
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910557896703321
• Lo trovi qui: Univ. Federico II