LEADER 02882nam  2200841z- 450 
001 9910557896703321
005 20231214133244.0
035   $a(CKB)5400000000046313
035   $a(oapen)https://directory.doabooks.org/handle/20.500.12854/76348
035   $a(EXLCZ)995400000000046313
100   $a20202201d2021      |y             0
101 0 $aeng
135   $aurmn|---annan
181   $ctxt$2rdacontent
182   $cc$2rdamedia
183   $acr$2rdacarrier
200 10$aFundamentals and Recent Advances in Epitaxial Graphene on SiC
210   $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021
215   $a1 electronic resource (94 p.)
311   $a3-0365-1179-2 
311   $a3-0365-1178-4 
330   $aThis book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.
606   $aTechnology: general issues$2bicssc
610   $aepitaxial graphene
610   $acopper
610   $aredox reaction
610   $aelectrodeposition
610   $avoltammetry
610   $achronoamperometry
610   $aDFT
610   $asilicon carbide
610   $aRaman spectroscopy
610   $a2D peak line shape
610   $aG peak
610   $acharge density
610   $astrain
610   $aatomic layer deposition
610   $ahigh-k insulators
610   $aion implantation
610   $aRaman
610   $aAFM
610   $aXPS
610   $agraphene
610   $aSiC
610   $a3C-SiC on Si
610   $asubstrate interaction
610   $acarrier concentration
610   $amobility
610   $aintercalation
610   $abuffer layer
610   $asurface functionalization
610   $atwistronics
610   $atwisted bilayer graphene
610   $aflat band
610   $aepitaxial graphene on SiC
610   $aquasi-free-standing graphene
610   $amonolayer graphene
610   $ahigh-temperature sublimation
610   $aterahertz optical Hall effect
610   $afree charge carrier properties
610   $asublimation
610   $aelectronic properties
610   $amaterial engineering
610   $adeposition
615  7$aTechnology: general issues
700   $aYakimova$b Rositsa$4edt$01310444
702   $aShtepliuk$b Ivan$4edt
702   $aYakimova$b Rositsa$4oth
702   $aShtepliuk$b Ivan$4oth
906   $aBOOK
912   $a9910557896703321
996   $aFundamentals and Recent Advances in Epitaxial Graphene on SiC$93029825
997   $aUNINA