LEADER 00921nam0-22003371i-450- 001 990007947390403321 005 20080409101651.0 010 $a88-430-0385-2 035 $a000794739 035 $aFED01000794739 035 $a(Aleph)000794739FED01 035 $a000794739 100 $a20041111d1999----km-y0itay50------ba 101 0 $aita 102 $aIT 105 $ay-------001yy 200 1 $a<>etą adulta$eteorie dell'identitą e pedagogie dello sviluppo$fDuccio Demetrio 205 $a4. Rist. 210 $aRoma$cCarocci$d1999 215 $a157 p.$d24 cm 225 1 $a<>servizio sociale$v16 610 0 $aEducazione degli adulti 676 $a374.001 700 1$aDemetrio,$bDuccio$f<1945- >$0118950 801 0$aIT$bUNINA$gRICA$2UNIMARC 901 $aBK 912 $a990007947390403321 952 $aP.1 PEP 250$fFLFBC 959 $aFLFBC 996 $aEtą adulta$9749004 997 $aUNINA LEADER 02952nam 2200865z- 450 001 9910557896703321 005 20220111 035 $a(CKB)5400000000046313 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/76348 035 $a(oapen)doab76348 035 $a(oapen)76348 035 $a(EXLCZ)995400000000046313 100 $a20202201d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aFundamentals and Recent Advances in Epitaxial Graphene on SiC 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (94 p.) 311 08$a3-0365-1179-2 311 08$a3-0365-1178-4 330 $aThis book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications. 606 $aTechnology: general issues$2bicssc 610 $a2D peak line shape 610 $a3C-SiC on Si 610 $aAFM 610 $aatomic layer deposition 610 $abuffer layer 610 $acarrier concentration 610 $acharge density 610 $achronoamperometry 610 $acopper 610 $adeposition 610 $aDFT 610 $aelectrodeposition 610 $aelectronic properties 610 $aepitaxial graphene 610 $aepitaxial graphene on SiC 610 $aflat band 610 $afree charge carrier properties 610 $aG peak 610 $agraphene 610 $ahigh-k insulators 610 $ahigh-temperature sublimation 610 $aintercalation 610 $aion implantation 610 $amaterial engineering 610 $amobility 610 $amonolayer graphene 610 $aquasi-free-standing graphene 610 $aRaman 610 $aRaman spectroscopy 610 $aredox reaction 610 $aSiC 610 $asilicon carbide 610 $astrain 610 $asublimation 610 $asubstrate interaction 610 $asurface functionalization 610 $aterahertz optical Hall effect 610 $atwisted bilayer graphene 610 $atwistronics 610 $avoltammetry 610 $aXPS 615 7$aTechnology: general issues 700 $aI?A?kimova$b Rosit?s?a$4edt$02010877 702 $aShtepliuk$b Ivan$4edt 702 $aI?A?kimova$b Rosit?s?a$4oth 702 $aShtepliuk$b Ivan$4oth 906 $aBOOK 912 $a9910557896703321 996 $aFundamentals and Recent Advances in Epitaxial Graphene on SiC$94799574 997 $aUNINA