LEADER 01562nam2-2200421li-450 001 990000211110203316 005 20180312154744.0 010 $a3-540-58618-0 035 $a0021111 035 $aUSA010021111 035 $a(ALEPH)000021111USA01 035 $a0021111 100 $a20001109d1994----km-y0itay0103----ba 101 0 $aeng 102 $aGW 200 1 $aComputer security - ESORICS 94$ethird European symposium on research in computer security$eBrighton,United Kingdom, November 7-9, 1994: proceedings$fDieter Gollmann (ed.) 210 $aBerlin [etc.]$cSpringer-Verlag$dcopyr. 1994 215 $aXI, 468 p.$cill.$d25 cm. 225 2 $aLecture notes in computer science$v875 410 0$10010020264$12001$aLecture notes in computer science 610 1 $aarchivi di dati$asicurezza$acongressi$a1994 610 1 $acongressi$abrighton$a1994 610 1 $asicurezza dei dati$acongressi$a1994 676 $a00574$9Archivi di dati e basi di dati 702 1$aGollmann,$bDieter 710 12$aEuropean symposium on research in computer security$d3.$eBrighton$f1994$0747223 801 $aSistema bibliotecario di Ateneo dell' Università di Salerno$gRICA 912 $a990000211110203316 951 $a001 LNCS (875)$b0017423$c001$d00103672 959 $aBK 969 $aSCI 979 $c19960112 979 $c20001110$lUSA01$h1714 979 $aALANDI$b90$c20010131$lUSA01$h1045 979 $c20020403$lUSA01$h1629 979 $aPATRY$b90$c20040406$lUSA01$h1615 996 $aComputer security - ESORICS 94$91492520 997 $aUNISA LEADER 02899nam 2200853z- 450 001 9910557896703321 005 20220111 035 $a(CKB)5400000000046313 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/76348 035 $a(oapen)doab76348 035 $a(EXLCZ)995400000000046313 100 $a20202201d2021 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aFundamentals and Recent Advances in Epitaxial Graphene on SiC 210 $aBasel, Switzerland$cMDPI - Multidisciplinary Digital Publishing Institute$d2021 215 $a1 online resource (94 p.) 311 08$a3-0365-1179-2 311 08$a3-0365-1178-4 330 $aThis book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications. 606 $aTechnology: general issues$2bicssc 610 $a2D peak line shape 610 $a3C-SiC on Si 610 $aAFM 610 $aatomic layer deposition 610 $abuffer layer 610 $acarrier concentration 610 $acharge density 610 $achronoamperometry 610 $acopper 610 $adeposition 610 $aDFT 610 $aelectrodeposition 610 $aelectronic properties 610 $aepitaxial graphene 610 $aepitaxial graphene on SiC 610 $aflat band 610 $afree charge carrier properties 610 $aG peak 610 $agraphene 610 $ahigh-k insulators 610 $ahigh-temperature sublimation 610 $aintercalation 610 $aion implantation 610 $amaterial engineering 610 $amobility 610 $amonolayer graphene 610 $aquasi-free-standing graphene 610 $aRaman 610 $aRaman spectroscopy 610 $aredox reaction 610 $aSiC 610 $asilicon carbide 610 $astrain 610 $asublimation 610 $asubstrate interaction 610 $asurface functionalization 610 $aterahertz optical Hall effect 610 $atwisted bilayer graphene 610 $atwistronics 610 $avoltammetry 610 $aXPS 615 7$aTechnology: general issues 700 $aYakimova$b Rositsa$4edt$01310444 702 $aShtepliuk$b Ivan$4edt 702 $aYakimova$b Rositsa$4oth 702 $aShtepliuk$b Ivan$4oth 906 $aBOOK 912 $a9910557896703321 996 $aFundamentals and Recent Advances in Epitaxial Graphene on SiC$93029825 997 $aUNINA