00722nam0 2200241 450 00002088820081223110841.0013005521220081223d1991----km-y0itay50------baengUSy-------001yyAdvanced microeconomic theoryGeoffrey A. JehleEnglewood CliffsPrentice-Hallc1991X, 406 p.24 cmAdvanced microeconomic theory47793MicroeconomiaJehle,Geoffrey A.070148180ITUNIPARTHENOPE20081222RICAUNIMARC000020888022/2208112NAVA22008Advanced microeconomic theory47793UNIPARTHENOPE00976nam0-2200337---450-99000881527040332120090226122605.088-7002-593-4000881527FED01000881527(Aleph)000881527FED0100088152720090226d1993----km-y0itay50------baitaITa-------001yy<<Il >>bambino obesocause, percorso e trattamento dell'obesità in età evolutivaPier Luigi Giorgi, Carlo CatassiRomaIl pensiero scientifico1993VIII, 276 p.ill.24 cmProblemi e aggiornamentiPediatriaObesitàGiorgi,Pier Luigi504903Catassi,Carlo504904ITUNINARICAUNIMARCBK9900088152704033218 c 421451DMEPEDMEPEBambino obeso806583UNINA02899nam 2200853z- 450 991055789670332120220111(CKB)5400000000046313(oapen)https://directory.doabooks.org/handle/20.500.12854/76348(oapen)doab76348(EXLCZ)99540000000004631320202201d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierFundamentals and Recent Advances in Epitaxial Graphene on SiCBasel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 online resource (94 p.)3-0365-1179-2 3-0365-1178-4 This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.Technology: general issuesbicssc2D peak line shape3C-SiC on SiAFMatomic layer depositionbuffer layercarrier concentrationcharge densitychronoamperometrycopperdepositionDFTelectrodepositionelectronic propertiesepitaxial grapheneepitaxial graphene on SiCflat bandfree charge carrier propertiesG peakgraphenehigh-k insulatorshigh-temperature sublimationintercalationion implantationmaterial engineeringmobilitymonolayer graphenequasi-free-standing grapheneRamanRaman spectroscopyredox reactionSiCsilicon carbidestrainsublimationsubstrate interactionsurface functionalizationterahertz optical Hall effecttwisted bilayer graphenetwistronicsvoltammetryXPSTechnology: general issuesYakimova Rositsaedt1310444Shtepliuk IvanedtYakimova RositsaothShtepliuk IvanothBOOK9910557896703321Fundamentals and Recent Advances in Epitaxial Graphene on SiC3029825UNINA