02882nam 2200841z- 450 991055789670332120231214133244.0(CKB)5400000000046313(oapen)https://directory.doabooks.org/handle/20.500.12854/76348(EXLCZ)99540000000004631320202201d2021 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierFundamentals and Recent Advances in Epitaxial Graphene on SiCBasel, SwitzerlandMDPI - Multidisciplinary Digital Publishing Institute20211 electronic resource (94 p.)3-0365-1179-2 3-0365-1178-4 This book is a compilation of recent studies by recognized experts in the field of epitaxial graphene working towards a deep comprehension of growth mechanisms, property engineering, and device processing. The results of investigations published within this book develop cumulative knowledge on matters related to device-quality epaxial graphene on SiC, bringing this material closer to realistic applications.Technology: general issuesbicsscepitaxial graphenecopperredox reactionelectrodepositionvoltammetrychronoamperometryDFTsilicon carbideRaman spectroscopy2D peak line shapeG peakcharge densitystrainatomic layer depositionhigh-k insulatorsion implantationRamanAFMXPSgrapheneSiC3C-SiC on Sisubstrate interactioncarrier concentrationmobilityintercalationbuffer layersurface functionalizationtwistronicstwisted bilayer grapheneflat bandepitaxial graphene on SiCquasi-free-standing graphenemonolayer graphenehigh-temperature sublimationterahertz optical Hall effectfree charge carrier propertiessublimationelectronic propertiesmaterial engineeringdepositionTechnology: general issuesYakimova Rositsaedt1310444Shtepliuk IvanedtYakimova RositsaothShtepliuk IvanothBOOK9910557896703321Fundamentals and Recent Advances in Epitaxial Graphene on SiC3029825UNINA