Miniaturized Transistors, Volume II

• Autore: Filipovic Lado
• Pubblicazione: Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
• Descrizione fisica: 1 online resource (352 p.)
• Soggetto topico: Mathematics & science; Research & information: general
• Soggetto non controllato: 1200 V SiC MOSFET; 2D hole gas (2DHG); 4H-SiC; 4H-SiC MESFET; active layers; active noise control; AlGaN/GaN HEMTs; avalanche photodiode; average subthreshold swing; band-to-band tunnelling (BTBT); bandwidth; bias temperature instabilities (BTI); body diode; circuit design; CMOS; CMOS compatible technology; CMOS device; compact circuit style; confinement effective mass; control gate; core-insulator; defects; device processing; device reliability; DGSOI; diamond; dielectrics; direct source-to-drain tunneling; electron trapping; F-N plot; field effect transistor; field emission; FinFET; FinFETs; flexible transistors; floating gate transistor; GAA; GaN; gate structures; gate-all-around; germanium-around-source gate-all-around TFET (GAS GAA TFET); grain boundary; HEMT; high gate; high responsivity; IMRD structure; integrated circuits; Landauer-Büttiker formalism; mean free path; MESFET; metal oxides; MoO3; mosfet; MOSFET; multi-recessed buffer; multi-subband ensemble Monte Carlo; multiple epitaxial layers; n/a; nanocomposites; nanoscale; nanoscale transistor; nanotransistor; nanowire; new device; non-equilibrium Green's function; non-radiative multiphonon (NMP) model; one-transistor dynamic random-access memory (1T-DRAM); oxide defects; particle trajectory model; polymers; polysilicon; power added efficiency; power added efficiency (PAE); power density; power-added efficiency; prototype; pulse width; quantum current; quantum transport; R-matrix method; random telegraph noise; reliability; silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs); silicon photodiode; silvaco simulation; simulation; single-defect spectroscopy; SiO2; solid state circuit breaker (SSCB); space-charge-limited currents; specific on-resistance; SPICE model; split-gate trench power MOSFET; surface transfer doping; surge reliability; T-channel; thermal simulation; three-input transistor; time-dependent defect spectroscopy; transient channel temperature; transport effective mass; tunnelling field-effect transistor (TFET); V2O5; vacuum channel; vertical air-channel diode; vertical transistor
• Persona (resp. second.): GrasserTibor; FilipovicLado
• Sommario/riassunto: In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon's physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.
• Titolo autorizzato: Miniaturized Transistors, Volume II
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910580205803321
• Lo trovi qui: Univ. Federico II