06521nam 2201633z- 450 991058020580332120231214133143.0(CKB)5690000000012030(oapen)https://directory.doabooks.org/handle/20.500.12854/87475(EXLCZ)99569000000001203020202207d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierMiniaturized Transistors, Volume IIBaselMDPI - Multidisciplinary Digital Publishing Institute20221 electronic resource (352 p.)3-0365-4169-1 3-0365-4170-5 In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.Research & information: generalbicsscMathematics & sciencebicsscFinFETsCMOSdevice processingintegrated circuitssilicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)solid state circuit breaker (SSCB)prototypecircuit designGaNHEMThigh gatemulti-recessed bufferpower densitypower-added efficiency4H-SiCMESFETIMRD structurepower added efficiency1200 V SiC MOSFETbody diodesurge reliabilitysilvaco simulationfloating gate transistorcontrol gateCMOS deviceactive noise controlvacuum channelmean free pathvertical air-channel diodevertical transistorfield emissionparticle trajectory modelF-N plotspace-charge-limited currents4H-SiC MESFETsimulationpower added efficiency (PAE)new devicethree-input transistorT-channelcompact circuit styleCMOS compatible technologyavalanche photodiodeSPICE modelbandwidthhigh responsivitysilicon photodiodeAlGaN/GaN HEMTsthermal simulationtransient channel temperaturepulse widthgate structuresband-to-band tunnelling (BTBT)tunnelling field-effect transistor (TFET)germanium-around-source gate-all-around TFET (GAS GAA TFET)average subthreshold swingdirect source-to-drain tunnelingtransport effective massconfinement effective massmulti-subband ensemble Monte Carlonon-equilibrium Green's functionDGSOIFinFETcore-insulatorgate-all-aroundfield effect transistorGAAnanowireone-transistor dynamic random-access memory (1T-DRAM)polysilicongrain boundaryelectron trappingflexible transistorspolymersmetal oxidesnanocompositesdielectricsactive layersnanotransistorquantum transportLandauer-Büttiker formalismR-matrix methodnanoscalemosfetquantum currentsurface transfer doping2D hole gas (2DHG)diamondMoO3V2O5MOSFETreliabilityrandom telegraph noiseoxide defectsSiO2split-gate trench power MOSFETmultiple epitaxial layersspecific on-resistancedevice reliabilitynanoscale transistorbias temperature instabilities (BTI)defectssingle-defect spectroscopynon-radiative multiphonon (NMP) modeltime-dependent defect spectroscopyResearch & information: generalMathematics & scienceFilipovic Ladoedt1309634Grasser TiboredtFilipovic LadoothGrasser TiborothBOOK9910580205803321Miniaturized Transistors, Volume II3029480UNINA