06556nam 2201657z- 450 991058020580332120220706(CKB)5690000000012030(oapen)https://directory.doabooks.org/handle/20.500.12854/87475(oapen)doab87475(EXLCZ)99569000000001203020202207d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierMiniaturized Transistors, Volume IIBaselMDPI - Multidisciplinary Digital Publishing Institute20221 online resource (352 p.)3-0365-4169-1 3-0365-4170-5 In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon's physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before.Mathematics & sciencebicsscResearch & information: generalbicssc1200 V SiC MOSFET2D hole gas (2DHG)4H-SiC4H-SiC MESFETactive layersactive noise controlAlGaN/GaN HEMTsavalanche photodiodeaverage subthreshold swingband-to-band tunnelling (BTBT)bandwidthbias temperature instabilities (BTI)body diodecircuit designCMOSCMOS compatible technologyCMOS devicecompact circuit styleconfinement effective masscontrol gatecore-insulatordefectsdevice processingdevice reliabilityDGSOIdiamonddielectricsdirect source-to-drain tunnelingelectron trappingF-N plotfield effect transistorfield emissionFinFETFinFETsflexible transistorsfloating gate transistorGAAGaNgate structuresgate-all-aroundgermanium-around-source gate-all-around TFET (GAS GAA TFET)grain boundaryHEMThigh gatehigh responsivityIMRD structureintegrated circuitsLandauer-Büttiker formalismmean free pathMESFETmetal oxidesMoO3mosfetMOSFETmulti-recessed buffermulti-subband ensemble Monte Carlomultiple epitaxial layersn/ananocompositesnanoscalenanoscale transistornanotransistornanowirenew devicenon-equilibrium Green's functionnon-radiative multiphonon (NMP) modelone-transistor dynamic random-access memory (1T-DRAM)oxide defectsparticle trajectory modelpolymerspolysiliconpower added efficiencypower added efficiency (PAE)power densitypower-added efficiencyprototypepulse widthquantum currentquantum transportR-matrix methodrandom telegraph noisereliabilitysilicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)silicon photodiodesilvaco simulationsimulationsingle-defect spectroscopySiO2solid state circuit breaker (SSCB)space-charge-limited currentsspecific on-resistanceSPICE modelsplit-gate trench power MOSFETsurface transfer dopingsurge reliabilityT-channelthermal simulationthree-input transistortime-dependent defect spectroscopytransient channel temperaturetransport effective masstunnelling field-effect transistor (TFET)V2O5vacuum channelvertical air-channel diodevertical transistorMathematics & scienceResearch & information: generalFilipovic Ladoedt1309634Grasser TiboredtFilipovic LadoothGrasser TiborothBOOK9910580205803321Miniaturized Transistors, Volume II3029480UNINA