LEADER 06521nam 2201633z- 450 001 9910580205803321 005 20231214133143.0 035 $a(CKB)5690000000012030 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/87475 035 $a(EXLCZ)995690000000012030 100 $a20202207d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aMiniaturized Transistors, Volume II 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 electronic resource (352 p.) 311 $a3-0365-4169-1 311 $a3-0365-4170-5 330 $aIn this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon?s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before. 606 $aResearch & information: general$2bicssc 606 $aMathematics & science$2bicssc 610 $aFinFETs 610 $aCMOS 610 $adevice processing 610 $aintegrated circuits 610 $asilicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) 610 $asolid state circuit breaker (SSCB) 610 $aprototype 610 $acircuit design 610 $aGaN 610 $aHEMT 610 $ahigh gate 610 $amulti-recessed buffer 610 $apower density 610 $apower-added efficiency 610 $a4H-SiC 610 $aMESFET 610 $aIMRD structure 610 $apower added efficiency 610 $a1200 V SiC MOSFET 610 $abody diode 610 $asurge reliability 610 $asilvaco simulation 610 $afloating gate transistor 610 $acontrol gate 610 $aCMOS device 610 $aactive noise control 610 $avacuum channel 610 $amean free path 610 $avertical air-channel diode 610 $avertical transistor 610 $afield emission 610 $aparticle trajectory model 610 $aF-N plot 610 $aspace-charge-limited currents 610 $a4H-SiC MESFET 610 $asimulation 610 $apower added efficiency (PAE) 610 $anew device 610 $athree-input transistor 610 $aT-channel 610 $acompact circuit style 610 $aCMOS compatible technology 610 $aavalanche photodiode 610 $aSPICE model 610 $abandwidth 610 $ahigh responsivity 610 $asilicon photodiode 610 $aAlGaN/GaN HEMTs 610 $athermal simulation 610 $atransient channel temperature 610 $apulse width 610 $agate structures 610 $aband-to-band tunnelling (BTBT) 610 $atunnelling field-effect transistor (TFET) 610 $agermanium-around-source gate-all-around TFET (GAS GAA TFET) 610 $aaverage subthreshold swing 610 $adirect source-to-drain tunneling 610 $atransport effective mass 610 $aconfinement effective mass 610 $amulti-subband ensemble Monte Carlo 610 $anon-equilibrium Green's function 610 $aDGSOI 610 $aFinFET 610 $acore-insulator 610 $agate-all-around 610 $afield effect transistor 610 $aGAA 610 $ananowire 610 $aone-transistor dynamic random-access memory (1T-DRAM) 610 $apolysilicon 610 $agrain boundary 610 $aelectron trapping 610 $aflexible transistors 610 $apolymers 610 $ametal oxides 610 $ananocomposites 610 $adielectrics 610 $aactive layers 610 $ananotransistor 610 $aquantum transport 610 $aLandauer-Bu?ttiker formalism 610 $aR-matrix method 610 $ananoscale 610 $amosfet 610 $aquantum current 610 $asurface transfer doping 610 $a2D hole gas (2DHG) 610 $adiamond 610 $aMoO3 610 $aV2O5 610 $aMOSFET 610 $areliability 610 $arandom telegraph noise 610 $aoxide defects 610 $aSiO2 610 $asplit-gate trench power MOSFET 610 $amultiple epitaxial layers 610 $aspecific on-resistance 610 $adevice reliability 610 $ananoscale transistor 610 $abias temperature instabilities (BTI) 610 $adefects 610 $asingle-defect spectroscopy 610 $anon-radiative multiphonon (NMP) model 610 $atime-dependent defect spectroscopy 615 7$aResearch & information: general 615 7$aMathematics & science 700 $aFilipovic$b Lado$4edt$01309634 702 $aGrasser$b Tibor$4edt 702 $aFilipovic$b Lado$4oth 702 $aGrasser$b Tibor$4oth 906 $aBOOK 912 $a9910580205803321 996 $aMiniaturized Transistors, Volume II$93029480 997 $aUNINA