Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

• Autore: Verzellesi Giovanni
• Pubblicazione: Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022
• Descrizione fisica: 1 online resource (320 p.)
• Soggetto topico: Energy industries and utilities; History of engineering and technology; Technology: general issues
• Soggetto non controllato: 2DEG; AlGaN/GaN; AlGaN/GaN heterojunction; AlGaN/GaN heterostructures; AlN; AlN buffer layer; aluminum nitride; annealing temperature; auto-compensation; band structure; bias stability; blue and yellow luminescence; breakdown field; breakdown voltage; buffer layer; carbon doping; charge traps; compensation ratio; crystal growth; crystallite size; cubic and hexagonal structure; current collapse; density functional theory; density of states; digital signal processor; driving technology; dry processing; electrochromic device; electron lifetime; energy storage system; equivalent-circuit modeling; fabrication; first-principles; gallium nitride; gallium nitride (GaN); GaN; GaN power HEMTs; GaN-based LED; GaN-HEMT mesa structures; gate bias modulation; heterogeneous integration; high electron mobility transistor; high electron mobility transistor (HEMT); high electron-mobility transistor (HEMT); high-electron mobility devices; high-electron mobility transistor; high-temperature; HTA; HVPE; indium oxide thin film; laser micromachining; laser processing; laser thermal separation; low defect density; low-resistance SiC substrate; magnetron sputtering; metal-oxide-semiconductor field effect transistor (MOSFET); microwave frequency; MIS-HEMTs; n/a; NH3 growth interruption; nickel oxide; nitridation; nitrogen dioxide gas sensor; noise; non-polar; normally off; optical absorption; optical band gap; p-GaN gate; p-GaN gate HEMT; p-type doping; palladium catalyst; photovoltaic module; piezoelectric micromachined ultrasonic transducers; plasma surface treatment; polar; power conditioning system; pure β-Ga2O3; QST; radio frequency; radio frequency sputtering; ranging; rectifying electrode; sapphire; scattering-parameter measurements; Schottky barrier diode; Schottky barrier diodes; semi-polar; SiC; silicon carbide; silicon carbide (SiC); SOI; solution method; Sr-doped β-Ga2O3; stealth dicing; strain relaxation; supercritical technology; synchronous buck converter; temperature; threshold voltage stability; time of flight (TOF); time to digital converter circuit (TDC); unidirectional operation; vanadium redox flow batteries; wafer dicing; wide bandgap semiconductor; wide-bandgap (WBG); X-ray diffraction; X-ray imaging; X-ray photoelectron spectroscopy; X-ray sensor
• Persona (resp. second.): VerzellesiGiovanni
• Sommario/riassunto: Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.
• Altri titoli varianti: Wide Bandgap Based Devices
• Titolo autorizzato: Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II
• Formato: Materiale a stampa
• Livello bibliografico: Monografia
• Lingua di pubblicazione: Inglese
• Record Nr.: 9910576886103321
• Lo trovi qui: Univ. Federico II