LEADER 05686nam 2201717z- 450 001 9910576886103321 005 20231214133056.0 035 $a(CKB)5720000000008313 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/84440 035 $a(EXLCZ)995720000000008313 100 $a20202206d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 10$aWide Bandgap Based Devices: Design, Fabrication and Applications, Volume II 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 electronic resource (320 p.) 311 $a3-0365-3994-8 311 $a3-0365-3993-X 330 $aWide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems. 517 $aWide Bandgap Based Devices 606 $aTechnology: general issues$2bicssc 606 $aHistory of engineering & technology$2bicssc 606 $aEnergy industries & utilities$2bicssc 610 $aenergy storage system 610 $apower conditioning system 610 $asilicon carbide 610 $avanadium redox flow batteries 610 $aAlGaN/GaN 610 $aSiC 610 $ahigh electron mobility transistor 610 $aSchottky barrier diode 610 $abreakdown field 610 $anoise 610 $acharge traps 610 $aradio frequency 610 $awide-bandgap (WBG) 610 $agallium nitride (GaN) 610 $asilicon carbide (SiC) 610 $ahigh electron mobility transistor (HEMT) 610 $ametal-oxide-semiconductor field effect transistor (MOSFET) 610 $adriving technology 610 $anickel oxide 610 $aannealing temperature 610 $acrystallite size 610 $aoptical band gap 610 $aelectrochromic device 610 $aindium oxide thin film 610 $asolution method 610 $aplasma surface treatment 610 $abias stability 610 $aaluminum nitride 610 $aSchottky barrier diodes 610 $aradio frequency sputtering 610 $aX-ray diffraction 610 $aX-ray photoelectron spectroscopy 610 $apiezoelectric micromachined ultrasonic transducers 610 $aranging 610 $atime of flight (TOF) 610 $atime to digital converter circuit (TDC) 610 $aAlGaN/GaN heterojunction 610 $ap-GaN gate 610 $aunidirectional operation 610 $arectifying electrode 610 $afirst-principles 610 $adensity functional theory 610 $apure ?-Ga2O3 610 $aSr-doped ?-Ga2O3 610 $ap-type doping 610 $aband structure 610 $adensity of states 610 $aoptical absorption 610 $aAlN buffer layer 610 $aNH3 growth interruption 610 $astrain relaxation 610 $aGaN-based LED 610 $alow defect density 610 $agate bias modulation 610 $apalladium catalyst 610 $agallium nitride 610 $anitrogen dioxide gas sensor 610 $alaser micromachining 610 $asapphire 610 $aAlGaN/GaN heterostructures 610 $ahigh-electron mobility devices 610 $ap-GaN gate HEMT 610 $anormally off 610 $alow-resistance SiC substrate 610 $atemperature 610 $ahigh electron-mobility transistor (HEMT) 610 $aequivalent-circuit modeling 610 $amicrowave frequency 610 $ascattering-parameter measurements 610 $aGaN 610 $aMIS-HEMTs 610 $afabrication 610 $athreshold voltage stability 610 $asupercritical technology 610 $aGaN power HEMTs 610 $abreakdown voltage 610 $acurrent collapse 610 $acompensation ratio 610 $aauto-compensation 610 $acarbon doping 610 $aHVPE 610 $aAlN 610 $ahigh-temperature 610 $abuffer layer 610 $anitridation 610 $ahigh-electron mobility transistor 610 $aheterogeneous integration 610 $aSOI 610 $aQST 610 $acrystal growth 610 $acubic and hexagonal structure 610 $ablue and yellow luminescence 610 $aelectron lifetime 610 $awafer dicing 610 $astealth dicing 610 $alaser thermal separation 610 $adry processing 610 $alaser processing 610 $awide bandgap semiconductor 610 $aphotovoltaic module 610 $adigital signal processor 610 $asynchronous buck converter 610 $apolar 610 $asemi-polar 610 $anon-polar 610 $amagnetron sputtering 610 $aHTA 610 $aGaN-HEMT mesa structures 610 $a2DEG 610 $aX-ray sensor 610 $aX-ray imaging 615 7$aTechnology: general issues 615 7$aHistory of engineering & technology 615 7$aEnergy industries & utilities 700 $aVerzellesi$b Giovanni$4edt$01323494 702 $aVerzellesi$b Giovanni$4oth 906 $aBOOK 912 $a9910576886103321 996 $aWide Bandgap Based Devices: Design, Fabrication and Applications, Volume II$93035626 997 $aUNINA