LEADER 05731nam 2201741z- 450 001 9910576886103321 005 20220621 035 $a(CKB)5720000000008313 035 $a(oapen)https://directory.doabooks.org/handle/20.500.12854/84440 035 $a(oapen)doab84440 035 $a(EXLCZ)995720000000008313 100 $a20202206d2022 |y 0 101 0 $aeng 135 $aurmn|---annan 181 $ctxt$2rdacontent 182 $cc$2rdamedia 183 $acr$2rdacarrier 200 00$aWide Bandgap Based Devices: Design, Fabrication and Applications, Volume II 210 $aBasel$cMDPI - Multidisciplinary Digital Publishing Institute$d2022 215 $a1 online resource (320 p.) 311 08$a3-0365-3994-8 311 08$a3-0365-3993-X 330 $aWide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems. 517 $aWide Bandgap Based Devices 606 $aEnergy industries and utilities$2bicssc 606 $aHistory of engineering and technology$2bicssc 606 $aTechnology: general issues$2bicssc 610 $a2DEG 610 $aAlGaN/GaN 610 $aAlGaN/GaN heterojunction 610 $aAlGaN/GaN heterostructures 610 $aAlN 610 $aAlN buffer layer 610 $aaluminum nitride 610 $aannealing temperature 610 $aauto-compensation 610 $aband structure 610 $abias stability 610 $ablue and yellow luminescence 610 $abreakdown field 610 $abreakdown voltage 610 $abuffer layer 610 $acarbon doping 610 $acharge traps 610 $acompensation ratio 610 $acrystal growth 610 $acrystallite size 610 $acubic and hexagonal structure 610 $acurrent collapse 610 $adensity functional theory 610 $adensity of states 610 $adigital signal processor 610 $adriving technology 610 $adry processing 610 $aelectrochromic device 610 $aelectron lifetime 610 $aenergy storage system 610 $aequivalent-circuit modeling 610 $afabrication 610 $afirst-principles 610 $agallium nitride 610 $agallium nitride (GaN) 610 $aGaN 610 $aGaN power HEMTs 610 $aGaN-based LED 610 $aGaN-HEMT mesa structures 610 $agate bias modulation 610 $aheterogeneous integration 610 $ahigh electron mobility transistor 610 $ahigh electron mobility transistor (HEMT) 610 $ahigh electron-mobility transistor (HEMT) 610 $ahigh-electron mobility devices 610 $ahigh-electron mobility transistor 610 $ahigh-temperature 610 $aHTA 610 $aHVPE 610 $aindium oxide thin film 610 $alaser micromachining 610 $alaser processing 610 $alaser thermal separation 610 $alow defect density 610 $alow-resistance SiC substrate 610 $amagnetron sputtering 610 $ametal-oxide-semiconductor field effect transistor (MOSFET) 610 $amicrowave frequency 610 $aMIS-HEMTs 610 $an/a 610 $aNH3 growth interruption 610 $anickel oxide 610 $anitridation 610 $anitrogen dioxide gas sensor 610 $anoise 610 $anon-polar 610 $anormally off 610 $aoptical absorption 610 $aoptical band gap 610 $ap-GaN gate 610 $ap-GaN gate HEMT 610 $ap-type doping 610 $apalladium catalyst 610 $aphotovoltaic module 610 $apiezoelectric micromachined ultrasonic transducers 610 $aplasma surface treatment 610 $apolar 610 $apower conditioning system 610 $apure ?-Ga2O3 610 $aQST 610 $aradio frequency 610 $aradio frequency sputtering 610 $aranging 610 $arectifying electrode 610 $asapphire 610 $ascattering-parameter measurements 610 $aSchottky barrier diode 610 $aSchottky barrier diodes 610 $asemi-polar 610 $aSiC 610 $asilicon carbide 610 $asilicon carbide (SiC) 610 $aSOI 610 $asolution method 610 $aSr-doped ?-Ga2O3 610 $astealth dicing 610 $astrain relaxation 610 $asupercritical technology 610 $asynchronous buck converter 610 $atemperature 610 $athreshold voltage stability 610 $atime of flight (TOF) 610 $atime to digital converter circuit (TDC) 610 $aunidirectional operation 610 $avanadium redox flow batteries 610 $awafer dicing 610 $awide bandgap semiconductor 610 $awide-bandgap (WBG) 610 $aX-ray diffraction 610 $aX-ray imaging 610 $aX-ray photoelectron spectroscopy 610 $aX-ray sensor 615 7$aEnergy industries and utilities 615 7$aHistory of engineering and technology 615 7$aTechnology: general issues 700 $aVerzellesi$b Giovanni$4edt$01323494 702 $aVerzellesi$b Giovanni$4oth 906 $aBOOK 912 $a9910576886103321 996 $aWide Bandgap Based Devices: Design, Fabrication and Applications, Volume II$93035626 997 $aUNINA