05731nam 2201741z- 450 991057688610332120220621(CKB)5720000000008313(oapen)https://directory.doabooks.org/handle/20.500.12854/84440(oapen)doab84440(EXLCZ)99572000000000831320202206d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierWide Bandgap Based Devices: Design, Fabrication and Applications, Volume IIBaselMDPI - Multidisciplinary Digital Publishing Institute20221 online resource (320 p.)3-0365-3994-8 3-0365-3993-X Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.Wide Bandgap Based DevicesEnergy industries and utilitiesbicsscHistory of engineering and technologybicsscTechnology: general issuesbicssc2DEGAlGaN/GaNAlGaN/GaN heterojunctionAlGaN/GaN heterostructuresAlNAlN buffer layeraluminum nitrideannealing temperatureauto-compensationband structurebias stabilityblue and yellow luminescencebreakdown fieldbreakdown voltagebuffer layercarbon dopingcharge trapscompensation ratiocrystal growthcrystallite sizecubic and hexagonal structurecurrent collapsedensity functional theorydensity of statesdigital signal processordriving technologydry processingelectrochromic deviceelectron lifetimeenergy storage systemequivalent-circuit modelingfabricationfirst-principlesgallium nitridegallium nitride (GaN)GaNGaN power HEMTsGaN-based LEDGaN-HEMT mesa structuresgate bias modulationheterogeneous integrationhigh electron mobility transistorhigh electron mobility transistor (HEMT)high electron-mobility transistor (HEMT)high-electron mobility deviceshigh-electron mobility transistorhigh-temperatureHTAHVPEindium oxide thin filmlaser micromachininglaser processinglaser thermal separationlow defect densitylow-resistance SiC substratemagnetron sputteringmetal-oxide-semiconductor field effect transistor (MOSFET)microwave frequencyMIS-HEMTsn/aNH3 growth interruptionnickel oxidenitridationnitrogen dioxide gas sensornoisenon-polarnormally offoptical absorptionoptical band gapp-GaN gatep-GaN gate HEMTp-type dopingpalladium catalystphotovoltaic modulepiezoelectric micromachined ultrasonic transducersplasma surface treatmentpolarpower conditioning systempure β-Ga2O3QSTradio frequencyradio frequency sputteringrangingrectifying electrodesapphirescattering-parameter measurementsSchottky barrier diodeSchottky barrier diodessemi-polarSiCsilicon carbidesilicon carbide (SiC)SOIsolution methodSr-doped β-Ga2O3stealth dicingstrain relaxationsupercritical technologysynchronous buck convertertemperaturethreshold voltage stabilitytime of flight (TOF)time to digital converter circuit (TDC)unidirectional operationvanadium redox flow batterieswafer dicingwide bandgap semiconductorwide-bandgap (WBG)X-ray diffractionX-ray imagingX-ray photoelectron spectroscopyX-ray sensorEnergy industries and utilitiesHistory of engineering and technologyTechnology: general issuesVerzellesi Giovanniedt1323494Verzellesi GiovanniothBOOK9910576886103321Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II3035626UNINA