05686nam 2201717z- 450 991057688610332120231214133056.0(CKB)5720000000008313(oapen)https://directory.doabooks.org/handle/20.500.12854/84440(EXLCZ)99572000000000831320202206d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierWide Bandgap Based Devices: Design, Fabrication and Applications, Volume IIBaselMDPI - Multidisciplinary Digital Publishing Institute20221 electronic resource (320 p.)3-0365-3994-8 3-0365-3993-X Wide bandgap (WBG) semiconductors are becoming a key enabling technology for several strategic fields, including power electronics, illumination, and sensors. This reprint collects the 23 papers covering the full spectrum of the above applications and providing contributions from the on-going research at different levels, from materials to devices and from circuits to systems.Wide Bandgap Based DevicesTechnology: general issuesbicsscHistory of engineering & technologybicsscEnergy industries & utilitiesbicsscenergy storage systempower conditioning systemsilicon carbidevanadium redox flow batteriesAlGaN/GaNSiChigh electron mobility transistorSchottky barrier diodebreakdown fieldnoisecharge trapsradio frequencywide-bandgap (WBG)gallium nitride (GaN)silicon carbide (SiC)high electron mobility transistor (HEMT)metal-oxide-semiconductor field effect transistor (MOSFET)driving technologynickel oxideannealing temperaturecrystallite sizeoptical band gapelectrochromic deviceindium oxide thin filmsolution methodplasma surface treatmentbias stabilityaluminum nitrideSchottky barrier diodesradio frequency sputteringX-ray diffractionX-ray photoelectron spectroscopypiezoelectric micromachined ultrasonic transducersrangingtime of flight (TOF)time to digital converter circuit (TDC)AlGaN/GaN heterojunctionp-GaN gateunidirectional operationrectifying electrodefirst-principlesdensity functional theorypure β-Ga2O3Sr-doped β-Ga2O3p-type dopingband structuredensity of statesoptical absorptionAlN buffer layerNH3 growth interruptionstrain relaxationGaN-based LEDlow defect densitygate bias modulationpalladium catalystgallium nitridenitrogen dioxide gas sensorlaser micromachiningsapphireAlGaN/GaN heterostructureshigh-electron mobility devicesp-GaN gate HEMTnormally offlow-resistance SiC substratetemperaturehigh electron-mobility transistor (HEMT)equivalent-circuit modelingmicrowave frequencyscattering-parameter measurementsGaNMIS-HEMTsfabricationthreshold voltage stabilitysupercritical technologyGaN power HEMTsbreakdown voltagecurrent collapsecompensation ratioauto-compensationcarbon dopingHVPEAlNhigh-temperaturebuffer layernitridationhigh-electron mobility transistorheterogeneous integrationSOIQSTcrystal growthcubic and hexagonal structureblue and yellow luminescenceelectron lifetimewafer dicingstealth dicinglaser thermal separationdry processinglaser processingwide bandgap semiconductorphotovoltaic moduledigital signal processorsynchronous buck converterpolarsemi-polarnon-polarmagnetron sputteringHTAGaN-HEMT mesa structures2DEGX-ray sensorX-ray imagingTechnology: general issuesHistory of engineering & technologyEnergy industries & utilitiesVerzellesi Giovanniedt1323494Verzellesi GiovanniothBOOK9910576886103321Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II3035626UNINA