Silicon Nanodevices
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| Autore: |
Radamson Henry
|
| Titolo: |
Silicon Nanodevices
|
| Pubblicazione: | Basel, : MDPI - Multidisciplinary Digital Publishing Institute, 2022 |
| Descrizione fisica: | 1 online resource (238 p.) |
| Soggetto topico: | Technology: general issues |
| Soggetto non controllato: | anode |
| anti-phase boundaries (APBs) | |
| arsenate | |
| arsenite | |
| atomic layer etching (ALE) | |
| band-to-band tunneling | |
| charge-trap synaptic transistor | |
| CVD | |
| dark current | |
| detectors | |
| digital etch | |
| doping effect | |
| dual-selective wet etching | |
| epitaxial grown | |
| epitaxial growth | |
| Fin etching | |
| FinFET | |
| germanium | |
| GeSn | |
| GOI | |
| heteroepitaxy | |
| HfO2/Si0.7Ge0.3 gate stack | |
| HNO3 concentration | |
| III-V on Si | |
| in-plane nanowire | |
| interface state density | |
| lasers | |
| lithium-ion batteries | |
| long-term potentiation (LTP) | |
| n/a | |
| nanowire-based quantum devices | |
| neural network | |
| neuromorphic system | |
| organotrialkoxysilane | |
| ozone oxidation | |
| p+-Ge0.8Si0.2/Ge stack | |
| passivation | |
| pattern recognition | |
| photodetectors | |
| prussian blue nanoparticles | |
| quantum computing | |
| quantum dot | |
| quasi-atomic-layer etching (q-ALE) | |
| responsivity | |
| selective epitaxial growth (SEG) | |
| selective wet etching | |
| short-term potentiation (STP) | |
| Si-cap | |
| Si-MOS | |
| silica beads | |
| silicon | |
| site-controlled | |
| spin qubits | |
| stacked SiGe/Si | |
| threading dislocation densities (TDDs) | |
| transistors | |
| vertical gate-all-around (vGAA) | |
| vertical Gate-all-around (vGAA) | |
| water decontamination | |
| yolk−shell structure | |
| Persona (resp. second.): | WangGuilei |
| RadamsonHenry | |
| Sommario/riassunto: | This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students. |
| Titolo autorizzato: | Silicon Nanodevices |
| Formato: | Materiale a stampa  |
| Livello bibliografico | Monografia |
| Lingua di pubblicazione: | Inglese |
| Record Nr.: | 9910595076903321 |
| Lo trovi qui: | Univ. Federico II |
| Opac: | Controlla la disponibilità qui |