03777nam 2201057z- 450 991059507690332120231214133253.0(CKB)5680000000080757(oapen)https://directory.doabooks.org/handle/20.500.12854/92043(EXLCZ)99568000000008075720202209d2022 |y 0engurmn|---annantxtrdacontentcrdamediacrrdacarrierSilicon NanodevicesBaselMDPI Books20221 electronic resource (238 p.)3-0365-4677-4 3-0365-4678-2 This book is a collection of scientific articles which brings research in Si nanodevices, device processing, and materials. The content is oriented to optoelectronics with a core in electronics and photonics. The issue of current technology developments in the nanodevices towards 3D integration and an emerging of the electronics and photonics as an ultimate goal in nanotechnology in the future is presented. The book contains a few review articles to update the knowledge in Si-based devices and followed by processing of advanced nano-scale transistors. Furthermore, material growth and manufacturing of several types of devices are presented. The subjects are carefully chosen to critically cover the scientific issues for scientists and doctoral students.Technology: general issuesbicsscsiliconyolk−shell structureanodelithium-ion batteriesin-plane nanowiresite-controlledepitaxial growthgermaniumnanowire-based quantum devicesHfO2/Si0.7Ge0.3 gate stackozone oxidationSi-capinterface state densitypassivationGOIphotodetectorsdark currentresponsivityprussian blue nanoparticlesorganotrialkoxysilanesilica beadsarsenitearsenatewater decontaminationvertical gate-all-around (vGAA)digital etchquasi-atomic-layer etching (q-ALE)selective wet etchingHNO3 concentrationdoping effectvertical Gate-all-around (vGAA)p+-Ge0.8Si0.2/Ge stackdual-selective wet etchingatomic layer etching (ALE)stacked SiGe/Siepitaxial grownFin etchingFinFETshort-term potentiation (STP)long-term potentiation (LTP)charge-trap synaptic transistorband-to-band tunnelingpattern recognitionneural networkneuromorphic systemSi-MOSquantum dotspin qubitsquantum computingGeSnCVDlasersdetectorstransistorsIII-V on Siheteroepitaxythreading dislocation densities (TDDs)anti-phase boundaries (APBs)selective epitaxial growth (SEG)Technology: general issuesRadamson Henryedt1236601Wang GuileiedtRadamson HenryothWang GuileiothBOOK9910595076903321Silicon Nanodevices3033980UNINA